메뉴 바로가기 본문 바로가기

공동활용장비

  • HOME
  • 장비검색
  • 공동활용장비
Laser Lift-Off (LLO) 광절연막 제거 장비
  • Laser Lift-Off (LLO) 가동중 광절연막 제거 장비
  • i-Tube No.1307-C-0129

    NTIS NoNFEC-2013-11-184015

  • 설치기관영남대학교산학협력단

    주소경북 경산시 대동 214-1

    담당자김정화 (T. )

    매뉴얼다운로드

    예약가능여부(장비 예약은 Zeus 시스템에서 회원가입후 예약가능)

장비정보
제작사

(주)QMC

모델 명

ELMS1000

내용연수

10년

구분

주장비

용도

시험

표준 분류

기계가공·시험장비 > 반도체장비 > 달리 분류되지 않는 반도체장비

취득일

2013-07-15

취득금액

522,000,000원

인증정보

기능

장비 상세설명

이용안내
사용형태

    

설치형태

고정형

사용료 형태

기타

장비 사용료

100,000원

장비 설명

1. Laser Lift-Off (LLO) provides a way to separate the GaN layer from sapphire/SiC
substrate.
2. GaN based LED dies can be debonded from the substrate and the energy density be
chosen to meet the optimum debonding conditions.
1. Material: GaN on Sapphire/SiC substrate etc
2. Full Automatic Operation System
- Automatic wafer alignment, laser beam focusing, wafer loading/unloading System
3. Laser System
- Type: 248nm KrF excimer laser (Cohearent 社)
- Pulse energy: Max. >600mJ
- Energy stability: 1%@2o
4. Working Stage System
1) X-Y axis: Up to 6 inch wafer
2) Z axis: 15mm or more
3) Theta(8) axis: 30 degrees or more
4) Flatness: < :t 10um in 6 inch area
5) Wafer chuck: Special vacuum chuck for uniform holding force across wafer
5. Beam Delivery System
1) Beam delivery support structure
- Vibration isolating mounting platform for 3 axes stages and beam delivery optics
2) Purging system
- N2 purged beam delivery system for best laser beam transmission and longer
life time of optics
3) Beam size: Max. 3 x 3mm2
4) Inhomogeneity: <:t5%@2o
6. Vision System
1) Process monitoring camera: Zoom vision system, Optical magnification, CCD camera
2) Alignment and inspection camera: Monitoring system with energy meter on the wafer
stage, Beam profiler on mask
수직형 LED 기술은 기존 일반형 제품 대비 방열특성을 개선하여 고출력/고휘도의 LED 제작을
사유 가능하게하는 기술이며, 광절연막 제거장비(LLO)는 웨이퍼접합 (Wafer Bonding) 후 레이저 빔 소스를 이용하여 기판을 제거하는 장비이며 LED 제작의 핵심 장비임.

장비 구성 및 성능

1. Material: GaN on Sapphire/SiC substrate etc
2. Full Automatic Operation System
- Automatic wafer alignment laser beam focusing wafer loading/unloading System
3. Laser System
- Type: 248nm KrF excimer laser (Cohearent 社)
- Pulse energy: Max. >600mJ
- Energy stability: 1%@2o
4. Working Stage System
1) X-Y axis: Up to 6 inch wafer
2) Z axis: 15mm or more
3) Theta(8) axis: 30 degrees or more
4) Flatness: < :t 10um in 6 inch area
5) Wafer chuck: Special vacuum chuck for uniform holding force across wafer
5. Beam Delivery System
1) Beam delivery support structure
- Vibration isolating mounting platform for 3 axes stages and beam delivery optics
2) Purging system
- N2 purged beam delivery system for best laser beam transmission and longer
life time of optics
3) Beam size: Max. 3 x 3mm2
4) Inhomogeneity: <:t5%@2o
6. Vision System
1) Process monitoring camera: Zoom vision system Optical magnification CCD camera
2) Alignment and inspection camera: Monitoring system with energy meter on the wafer
stage Beam profiler on mask

챗봇상담아이콘 챗봇
상담