Accelerating voltage : 0 to 6㎸
Ion beam diameter : about 500㎛
Milling rate : 300㎛/hr on Si
1. Cross-Section Stage
X movement : ±7㎜, Y movement : 0~3㎜
Max. sample size : 20㎜W x 12㎜D x 7㎜H
2. Flat Milling Stage
X movement : 0 to 5㎜ or wider
Max. sample size : Φ50㎜ x 25㎜H or larger
3. Cryo System
Min. temperature -150℃