1. Configuration
(1)Main frame(Cassette load lock, Wafer orienter / Degas chamber, Pre-clean chamber, Transfer / Buffer chamber, Process chamber)
(2) Transformer / Main AC
(3) System controller
(4) RF, DC generator rack
(5) Pump, Chiller, Heat exchanger
2. Substrate size: Max ∅150mm(∅6inch)
3. Chamber type
(1) PVD, IMP: 8inch standard or wide type
(2) MOCVD: TxZ chamber
4. Target/Magnet type: 11.3inch magnet, ~12inch target for all PVD, IMP
5. Power
(1) DC: 12kW(PVD1,IMP), 24kW(PVD2)
(2) RF: 1.25kW/350kHz(MOCVD), 2MHz/3kW(IMP)
6. Vacuum(Pump): Dry, turbo molecular, cryo pump