1. PE-CVD 본체
1) Substrate size : 6, 8 inch, 200mm ✕ 200mm
2) Deposition material : 광도파로 SiO2
3) Thin Film Thickness : ≥ 15㎛(SiO2)
4) Thickness Uniformity : ≤ 5%(8인치, 9PT, 8mm EE)

5) SiO2 Refractive Index : ≥ 1.4573 ± 0.032
6) Deposition Rate : ≥ 2,500 Å/min
7) Transmittance : ≥ 92%@633nm(at SiO2 1um)
8) 연속증착공정 : 가능