TEL
TEL 580
9년
주장비
교육
기계가공·시험장비 > 반도체장비 > 식각장비
2003-12-16
62,000,000원
고정형
시간별
0원
* Application : SiO2, Si3N4 dry etch
* RF Power : 800W
* Etch Rate :
~2000Å/min (Nitride Film),
~ 2000Å/min (Oxide Film)
* Uniformity :
~5%Within Wafer (Nitride Etch)
~5%Within Wafer (Oxide Etch)
* Selectivity :
14:1(Oxide : Poly),
3:1(Nitride or Oxide : PR)
1.5:1 (Oxide : Nitride)
* Application Design Rule : 0.5um
* Particle : 100개(0.3um Size)