네오세미테크
1500도/2~4 Inch
4년
주장비
생산
화합물 전처리·분석장비 > 달리 분류되지 않는 화합물 전처리 분석장비 >
2005-05-12
129,998,000원
고정형
원
Growing Equipments
1. High Pressure Liquid Encapsulated Czochralski(LEC)
Single crystal ingots are produced using 99.99999%(7N) purity Ga and As as the starting material. Ingots of 2" to 6" diameter are regularly produced.
2. Liquid Encapsulated-Vertical Bridgeman(LE-VB)
GaAs ingots are produced continuously by LE-VB systems using recharging method.
3. Vertical Gradient Freeze(VGF)
Single crystal GaAs is grown from high purity polycrystalline GaAs is in a vertical temperature gradient. This method produces crystals with a much lower dislocation density than those produced by any other growth method. 2", 3" diameter crystals are regularly produced and 4" diameter is under development.
:: VGF, LE-VB & LEC synthesis can be produced upon request according to required specifications.
GaAs 단결정을 제조함에 있어서 지지대로 전체를 둘러싸도록 구성시킨 PBN 또는 석영 crucible을 사용한 것을 특징으로 하는 LEC(Liquid encapsulated czochralski) 법과 수직으로 성장시키는 VB(vertical bridgeman) 법에 의한 GaAs 단결정 성장방법.