1) One process & load-lock chamber can be handled 6“and 8“ wafer for silicon etching 2) Chamber primary pump: Dry pump 3) Chamber Maglev turbo molecular pump 4) Electrical heating kit for protecting to deposit polymer process chamber inside wall 5) Source power supply: ≥5.5 kW RF 7) Bias power supply: 300W LF 8) RF generator and matching network ① HF (13.56 MHz, 300/30W dual range) ② LF (50~450 KHz) ③ SOI process 9) 150 & 200 mm electrostatic Pin type chuck (for room temperature process)특징1. Wafer size: 8“ wafer (compatible with 6“ wafer)2. Etch Rate 1) 5㎛ trench : ≥ 10㎛/min 2) 30㎛ trench : ≥ 15㎛/min3. Uniformity: ≤ ±5% (across wafer & wafer to wafer)4. Selectivity Si:PR : ≥ 150:15. Etch Profile: 90°±0.5°6. Notch free available7. Non bosch direct etching : Angle 60±2° 8. Non bosch direct etching selectivity : ≥ 60:1&N&T&I&S&null&N&T&I&S&null