a. This system has a Transfer chamber that are integrated to two Sputtering chambers. b. This system should be designed for metal and silicone oxide deposition independently. c. This system should be have substrate heating system up to 400℃. d. The substrate tray should be over 300 mm size e. Substrate up/down operated cylinder with welded bellows (T-S Distance = 50~180mm controllable) a. PROCESS CHAMBER MODULE (PM1-metal deposition) 1) Process chamber Chamber material : Electro-polished SUS Wafer loading/unloading type : Automatic loading/unloading by transfer chamber Port : View port(with shutter), Gauge port, Gas injection port, wafer loading/unloading port (rectangular type) 2) Substrate heater Heater type : Molded heater type (Max. temperature : 400℃ (heater temperature) Substrate tray size : 300mm tray (2 inch * 9 wafers loading per tray) Substrate up/down operated cylinder with welded bellows Stroke : Max. 130mm (T-S Distance = 50~180mm) Substrate rotation for improve dep. uniformity Rotation control by motor Rotation feedthrough of Ferrofluidic(= magnetic seal) Electrical wire & thermocouple wire rotation Ceramic isolated electrical feedthrough 3) Sputter gun Gun size : 4 inch Number of gun : 4 ea Gun shutter rotation & z-motion moving for protection gun-to-gun cross contamination b. PROCESS CHAMBER MODULE (PM2-oxide deposition) 1) Process chamber - Chamber material : Electro-polished SUS - Wafer loading/unloading type : Automatic loading/unloading by transfer chamber - Port : View port(with shutter), Gauge port, Gas injection port, wafer loading/unloading port (rectangular type)&N&T&I&S&null&N&T&I&S&null