과제명 : 반도체광원 시험 생산지원(국비)
과제 책임자 : 김왕기



(1) 설비 외관 검사 결과
- Asher는 Process Chamber, Power Supply System, Vacuum Pump System,
Gas control box, Main control box 등으로 구성되어 있음.
- Process Chamber는 Plasma를 형성시키는 Power 및 Vacuum 라인과 연결되어
있으며 Process Gas 공급라인과 연결되어 있음
- CHF3, Ar, SF6, O2 공급을 위한 MFC를 연결한 Gas 포트
- Wafer 공급을 위한 자동 Loadlock chamber
- APC를 동반한 Turbo Pump System 및 Rotary pump
- RF Generater를 통한 Power 공급 시스템
- LCD monitor를 통한 Main Control System
- Plasma 상태확인을 위한 View port 및 Vacuum Gage
- PCW 온도제어를 위한 Chiller

(2) System Control Part
- PC 내장, 키보드 및 마우스로 조작
- 압력, 온도, 동작시간 등을 제어 (프로그램 내장)
- 프로그램은 단순하고 조작이 쉽게 구성되어 있음

- Power On/Off, Heater On, Pump On switch
- Parameter 입력/수정/조작에 관한 프로그램동작의 간단한 교육 실시

(3) Loadlock Chamber : 자동 wafer handling robot arm 장착
- Wafer carrier를 handling 할 수 있는 robot arm 장착
- Pumping system은 Rotary pump 사용
- Base pressure : 10-3 Torr

(4) Utility
1) RF power: ≥ 600W @ 13.56 MHz
2) Pump
- Rotary : ALCATEL Adixen ADP122P
- Turbo : ALCATEL ATP 400C
3) Vacuum gage
- MKS baraton gage
- 4336K-N Ion gage
4) MFC
- Ar : 200sccm - SF6 : 100sccm
- CHF3 : 100sccm - O2 : 1slm

5. 장비 구성
(1) Main Chamber
- Loadlock system
- Vacuum pumping system
- Gas input line
- RF power generater 및 maching system

(2) Control System
- Separate control panel
- Alarm 및 emergency switch
- Gas MFC 및 Control computer

① For Ashing
- Ash Rate : 5,000 A/min Room
Temperature
- Ash Rate : 2 um/min 100℃
- Etch Uniformity at 1.0um ashing depth
(Max-Min/2 avg, 3mm edge exclusion)
±3% in 2“ wafer
±5% wafer to wafer in batch
±5% batch to batch
* any device damage free

② For Oxide etching
- Etch Rate : 3,000A/min
- Selectivity to Photoresist mask 8:1
- Profile angle: Anisotropic (85 degree)
- Etch Uniformity at 3,000A etching depth
(Max-Min/2*avg, 3mm edge exclusion)
±3% in 2“ wafer
±5% wafer to wafer in batch
±5% batch to batch
* PR damage free
③ For Nitride etching
- Etch Rate : 4,000A/min
- Selectivity to Photoresist mask 10:1
- Profile angle: Anisotropic ( 85 degree)
- Etch Uniformity at 3,000A etching depth
(Max-Min/2*avg, 3mm edge exclusion)
±3% in 2“ wafer
±5% wafer to wafer in batch
±5% batch to batch
PR damage free


① Front control console
② Secondary movable station for service
area operation.
③ Pentium grade industrial computer
④ over 15 inch flat panel display or
touch screen interface for full process
control
⑤ Process recipes can be stored on the
hard disk and USB flash device to back up
recipes.
⑥ The system is designed for dual
pressure operation allowing etching (less
than 100 mTorr process pressure
range)and ashing (less than Torr process
pressure range) in the same process
chamber.

① The cathode and anode are both machined out of single blocks of aluminum
② Hard anodized chamber for protection
from process chemistries
③ Includes one or two viewports fitted with an RF shield for viewing the plasma and endpoint detection.

① Main ICP Power : 1.5 KW 2MHz
or 13.56 MHz solid-state RF generator
with automatic impedance matching network.
② Bias : 600W 13.56MHz
solid-state RF generator with automatic
impedance matching network.
Remark: Bidder should use one of AE, Comdel, and Adtek‘s RF Generator.


① Substrate capacity over 6 x 2“ wafers
(should be available 3 x 2“, 3 x 3“,
1 x 4“, 1 x 6“ wafer carrier when
required)
② Mechanical substrate and tray clamping
with He backside cooling
③ Substrate temperature controllable from
5도 ~ 150℃ by heat exchanger
(water temperature accuracy of ±1도)&N&T&I&S&null&N&T&I&S&null