1) 규격 및 수량 : 1. Au, AuSn, Cu electroplating bath and wet station 2. Wafer Size: 2 inch ~ 8 inch 3. Rectifier (정류기) 1) Output voltage : DC 0 ~ 18V 2) Output current : DC 0 ~ 1A 3) Current density : 1ASD , Current density accuracy : ±0.05ASD 4. Heater 1) Power : 2 kW 2) Temperature : 80℃, Accuracy : ± 2℃ 5. Circulating pump required. 60 ~ 90L/min 6. Chemical filter( 5㎛) & housing 2) Plating Part Spec. l. Rectifier 1) Output voltage : DC 0 ~ 18V 2) Output current : DC 0 ~ 1A 3) Current density : ≧ 1ASD 4) Current density accuracy : ≦ ±0.05ASD 5) Rectified voltage ripple noise : ≦ ±100mV 6) Rectified current ripple noise : ≦ ±0.5mA 2. Heater 1) Power : ≧ 2 kW 2) Temperature : ≦ 80℃ 3) Accuracy : ≦ ± 2℃ 4) Cooling line should be loaded in reservoir bath for Cu plating 3. Parts 1) Temperature controller 2) Pt/Ti Meas (for 3㎛ plating thickness) 3) Cooling line should be loaded in reservoir bath for Cu plating 4) Temperature sensor, Amper meter, PH meter 4. Circulating pump required. 60 ~ 90L/min 5. Chemical filter(≦ 5㎛) & housing