특징
플라즈마, Thermal 선택형 CNT 합성장치

사양
6" 웨이퍼 대응, ~900oC

소스가스
아세틸렌, 메탄 및 암모니아, 아르곤, 질소, 수소 등 대응

세부사양
The Chemical Vapor Deposition system must meet or exceed the following specifications. Basically the system comprises of the followings:
. CNT synthesis unit (Chamber, Reactor, Vacuum, power feedthrough)
. Load lock
. Plasma process unit
. Gas Delivery System.
. Process control unit