High Plasma Density, High Dep. rate PECVDWafer Size : 8", Max Substrate Temperature : 400 ℃Power Supply : 600 W, 13.56 MHz RF GeneratorProcess Gas : N2O, N2, CF2/O2, pure SiH4/NH3Process Guarantee : 1000Å ~ 10umWith in Wafer Uniformity : ±3%, Wafer to Wafer Uniformity : ± 3 %