특징1. 1. 1. Gas phase diffusion system 1) Diffusion chamber (1) SUS diffusion chamber (2) Wafer size of adapted capability in susceptor: 2 inch 1ea (3) Water cooling of chamber wall with a circulator chiller (4) Quartz liner inside of the SUS chamber on which the reaction by-products are deposited (5) Low pressure operation down to 50 torr through automatic pressure control system. (6) Microprocessor controlled heating system up to 1000oC (7) Wafer rotation up to 300 rpm to enhance the uniformity of the dopant gas distribution onto wafer surface (8) Injection manifold with run-vent scheme to select the reactants gases supplied onto wafer surface구성및성능APD 제작활용분야APD에 Zn 도핑