Maker / Model : A-Tech system

Application
RF PECVD Depo. (SiO2, SiNx,Al2O3,SiC,AlN)
Passivation of organic device

Equipment Performance
Operation Mode
: Automation and Manual Operation available
Available substrate size: 200×200mm ( 8 inch wafer )
※ the process of small glass (2.5*2.5mm or 5*5mm) possible.
Chamber Size: 700mm(Dia) * 560mm(H)
Base Pressure ≤ 3.0E-7 Torr
Heating substrate : Max 450℃
Gas source : NH3, N2, SiH4, O2, N2O, CF4 ,NF3, Ar,
H2, CH4
Liquid source : TMA(Try-methyl Aluminum)
Gases (MFC Capacity)
Ar 100sccm, O2 60sccm, N2 90sccm
CH4 50sccm, SiH4 80sccm, NH3 100sccm

Process Performance
Nitride Deposition ● Oxide Deposition
THK Uniformity < 1% (1sigma) ▷THK Uniformity < 1~1.8% (1sigma)