- Etching material (유전체) : SiO2, SixNx , Deep Si, PR Ashing- Substrate : pieces ~ 8 inch, 200 mm × 200 mm- Uniformity (WIW) : < ± 5 %- Etch rate : SiO2 300 ~ 3000 Å/min, SixNx 250 ~ 2000 Å/min, Deep Si > 1 ㎛ / min, PR Ashing > 7500 Å/ min