특징- Configuration:Poly-Silicon Etch- Wafer size : 20.32cm(8inch) wafer applicable- Etch Rate:Silicon Etch ＞ 400nm/Min, SiO2 Etch > 300nm/Min- Plasma Density: > 1012 /cm3 @ Ar, 50mTorr, 800W- Plasma Uniformity & Etch Uniformity:≤ ±5% Within Wafer ≤ ±5% Wafer to Wafer- Ultimate Base Pressure:≤ 4x10-6 Torr- Leak Rate:≤ 5mTorr / min Gas Flow Tolerance: ≤ ±10%- Forward RF Power Tolerance:≤ ± 1% of Setting Power- RF Pulse Operation & Max Reflected Power: 0 ~ 1 kHz`pulse - Duty Ratio: 20 % ~ 99 % ≤ 1% of FWD Power During Pulse - Selectivity:＞ 3:1 (a-Si : PR) ＞ 10 :1 (a-Si : Oxide)- Profile: 90±5˚- Plasma Measurement System: Double Langmuir Probe- Plasma Density: 108~1013 /cm3- Electron Temperature: 0.1~10 eV- Floating Potential: -250 to +250V플라즈마 진단시스템 장착(이온농도, 전자온도, 이온에너지, 등 제어가능)8"-compatible