Vacuum chamber: 2 loadlock, process chamber I and process chamber II- Ultimate pressure for system: 5 × 10-10 Torr within 12 hours- Base pressure for film process: 1 × 10-8 Torr within 30 minutes - Deposition material: Cu, In, Ga, Se, Mo, intrinsic, n and p type ZnO, etc- Substrate material: Glass and flexible substrate- Substrate heating, cooling method: Max. 1,200 ℃, water cooling - Thickness uniformity of thin film: ≤± 3% on 100 × 100 mm2- Deposition control rate: 0.1 - 50 Å/sec- Process time and deposition rate: 0.5 Å/sec during 60 minutes- Temperature of effusion cell: Max. up to 1,800 ℃- Process recipe control: Automatic deposition control program depend on multi deposition rate, time, substrate temperature, heating and cooling function