○ Process Module #1 - Direct RF Plasma Enhancement (13.56 MHz) - Gas Injection by Showerhead method - Substrate Heating Capacity : room temp. ~ 550 ℃ - ALD & PEALD Mode Process available using Chuck moving method - Process Available : TiN, TaN, WN, TiSiN, TaSiN, TiAlN, SiN, SiON○ Process Module #2 - Thermal ALD process - Gas Injection by Showerhead method - Substrate Heating Capacity : room temp. ~ 550 ℃ - ALD & CVD Mode Process available using Chuck moving method - Process Available : Al2O3, HfO2, ZrO2, RuO2, SrTiO3