과제명 : 반도체광원 시험생산기술지원사업
과제책임자 : 김왕기
수행기간 :



SPECIFICATION

WAFER - 19 * 2"
HEATER - W (TUNGSTEN )

A. Feature :
1. This equipment should be designed for growing of (InAlGa)N epitaxial layers.
2. Contractor should provide the sample demonstration on customer site.

B. Specification :
1. Growth chamber
1) Reactor
- Size : larger than 18 x 2" wafer capacity
- Pressure control : MKS high temp. baratron gauge　(1~1000 torr)
- No leak rate : 1E-6 torr, 1E-3 torr/day leak tight
-Type : Vertical, sus chamber minimizing side wall deposition
- Mechanical span gauge for overpressure protection
- Dry vacuum pump : high pumping speed ( 2500 liter/min ) and ultimate partial pressure ( 3E-3 torr ), Including LCD Display, N2 purging & water cooling and System alarm interface
- Pressure sensor for emergency of pump over-pressure
- Auto-vent when the pump is down
- Integrated magnetofluidic rotation mechanism, motor, and drive assembly

2) Heater system
- Maximum heating temperature : Greater than 1200도
- Susceptor variation capability ( 2" ~ 4" ) : No change of heating system part, heating system arrangement and heating system alignment
- Controlling temperature with Emissivity compensating pyrometer system

3) Wafer rotation system
- SiC coated graphite susceptor
- Wafer rotation over 10 rpm to enhance thickness uniformity

4) Loadlock and Glove box
- High vaccum loadlock chamber and two dwell-stations
for high throughput capability
- Glove box with inert gas flow
- Pressure control, overpressure protection
- Interface for customized monitoring system
- Hygrometer to monitor the glove box environment
- Integrated vacuum cleaner and vacuum wand
- Gas purification: Circulation and regeneration unit
O2 level: 1ppm
Moisture level: 1ppm

5) In-situ System
- Real-time wafer reflectance measurement

2. Source handling system
1) MO source supply system
- 10 standard MO-source lines : 1 TMGa standard, 1 TMGa double dilution, 1 TMAl standard, 1 TMAl double dilution, 2 TMIns with 2 EPISONs, 2 Cp2Mg, 2 standard spare
- make-up lines for flow balance
- 7 Mo-source Bathes
- Mo-source line heating : Heating wire or tape from bubbler to manifold , temperature control range (25도 ~ 200도)
- Bathe temperature range -20 도~ 50도, Over-temp. protection

2) Hydride Source Supply System
- 3 Hydride source lines : 1 NH3, 1 SiH4 double dilution and 1 Spare

3) Gas Supply system
- High flow rates of H2, N2 and Hydrides injection manifold (including Hygrometer : Measuring dew point of H2, and N2 gas)
- Automated differential pressure gauge between run and vent line and pressure equalizer
- Metal sealed MFC and electronic pressure controller
- Blend of H2/N2 carrier gas for individual MO source

3. Electronic and control system
1) System control and monitoring system
- Standard control system : Substrate rotation controller, reactor temperature controller, reactor pressure controller, and system logic controller.
- System control and monitoring software.
- Graphical display windows for all gas panel, reactor and exhaust lines.
- User-configurable parameters for valve states, and set points.
- All mass flow controllers and electronic pressure controlles : monitor and display setting values and real values.
- Saving data files to spread sheet program with automatic data compression for analysis and presentation.
- System status and system failure alarms recording.
- Definable levels for system safety and security

2) Industrial PC System
- Industrial based modular PC
- Pentium4 2GHz or better
- 512MB RAM, 250MB ZIP Drive and 40GB HD or better
- High resolution LCD monitor, 16MB Video card or better
- MS windows 2000, Service PACK or better

3) Safety Interlock
- Power failure interlock : Valves auto-closed and N2 purging in MOCVD system
- Low gas-pressure interlocks : H2, N2, and Hydride(s) gas pressure
- Pneumatic air-pressure interlock.
- Extract-air low interlock.
- Low cooling water supply interlock.
- Over-pressure at vacuum pump outlet.
- Protection of MOCVD system to the back-flow in the case of system interlocks.