과제명 : 반도체광원시험생산기술지원
과제책임자 : 김왕기

MOCVD P-II

규격 및 수량 :

- 49x2“/18x3“ wafer capacity
- III-V compound based materials


- 적색 LED 구조의 에피성장 장비임
- In, Ga, Al, P 계 의 원료가스를 사용하여 InGaP, AlGaP, InGaAlP 등의 재료를 고온에서 증착하여 p-n 구조 형성에 활용
- 공정 중의 에피층 재성장에도 활용

① This equipment should be designed for growing
of InGaAlP LED structures.
② Contractor should provide the sample
demonstration on customer site.


① Water cooled double o-ring sealed stainless steel
growth chamber
② Capacity : More than 40 for 2“ or 18 for 3“ growth
per one run
③ In-situ monitoring viewports
④ Contractor specific heating system (up to at least 80
0℃)
⑤ Electronic MFCs for MO and hydride sources
⑥ Wafer carrier rotation system for uniformity of the
growth material
⑦ Reactor overpressure monitoring/protection system



① Real-time wafer selective reflectance measurement
② In-situ true wafer temperature measurement

① Glove box with purified Nitrogen gas flow
② Regeneration and recirculation system
③ Moisture level monitoring/alarming system
④ Integrated vacuum cleaner




① MO-source lines including: 2 TMGa, 2 TMAl,
2 TMIn, 1 Cp2Mg and additional spare lines
② Automatic run/vent pressure balancing line