특징
(1) General Specifications

Wafer size : 300 mm in diameter
(Custom-tailored for 200 mm-dia. wafers)
The orientation flat or V notch meeting the SEMI or JEIDA standards is applicable.
Measuring method : Cursor and line profile measurement
Measuring range : 0.05 to 2.0 m (For a measuring range of less than 0.05 µm, a separate consultation is available.)
Measuring
repeatability : 1% or 2 nm (3 ), whichever greater
Throughput : 24 wafers/hour or more in continuous measurement mode
(Measurement points: 1 point/chip, 20 chips/wafer)
(with Hitachi standard test wafer under Hitachi’s measurement conditions)
Secondary electron
image resolution : 2 nm (accelerating voltage 0.8 kV)
Magnification : 1,000 to 300,000 (SEM image)
Approx. 110 (optical microscope image) (220 selectable by option setting)
(measurement accuracy guaranteed at 40,000 to 300,000)
Measuring mode : Auto measurement or manual measurement