1 features:
ㆍ ZrO/W emitter provides the use of electron beam whose diameter is as fine as 2nm
for long hours with high stability.
ㆍ Capable of drawing lines of 8nm width
ㆍ The use of 18bit DAC provides electron beam positioning with 0.3nm resolution.
ㆍ The laser interferometer achieves 20nm stitching accuracy and 25nm overlay
accuracy.
ㆍ Electrostatic deflector is capable of providing max 2.4 mm x 2.4 mm drawing frame.
ㆍ Accommodates max 8" diameter wafers or 8" square masks

2 Tool performances
ㆍ Acceleration voltage of 25kV, 50kV, 75kV
ㆍ High stability, long hour operation with electron beam whose diameter is as fine as
1.8 nm
ㆍ High stability, long hour operation with electron beam whose diameter is as fine as 2 nm
ㆍ 18bit DAC provides electron beam positioning with 0.31nm resolution.
ㆍ The laser interferometer achives 20 nm stitching accuracy and 25nm overlay
accuracy.
ㆍ Accommodates 8" diameter wafers / 8" square masks.