- Process chamber Vacuum
: Ultimate pressure <1.0E-7 (within 24 in after target change)
: base pressure < 5.0E-7 (within 6 in after target change)
- 4, 6 inch wafer or 8 inch wafer
- within substrate < ± 10% (49 points)
- sputter down
- 7inch sputtering source
- 3 sources
- Substrate Rotation : 25 rpm
- Substrate Heating : Max. 300±3 ℃