A chamber : Oxide/Nitride etch N2, O2, CF4, CHF3, SF6, He, Ar
- B chamber : Poly etch chamber N2, CF4, HBr, Cl2, He, Ar
- RF Power : 300w~1200W
- Magnetic field : Max 90 gauss
- Within wafer unifomity : 3%(SiO2,Si3N4), 5%(Poly-Si)