a-Si, N+ a-Si Process
N+ a-Si Resistivity
: ≤ 500 Ω•cm
Film Thickness Uniformity
: a-Si / N+ a-Si ≤±5.0 %
Stress
: a-Si ≤±500 Mpa
Substrate
: 150×150(0.63t) glass
SiO2, SiNx Process
Refractive Index
: SiO2 1.445-1.480
SiNx 1.75-1.95
Film Thickness Uniformity
: SiO2/SiNx≤±5.0 %
Depo. Rate
: SiO2/SiNx≥500 Å/min
Stress : ≤±500 MPa